DC AND RF SPUTTERING UNIT
Process Chamber: Cylindrical 350 mm dia × 450 mm height, up sputter configuration with 4” diameter substrate with 6” diameter view window.
Base Pressure: 2 × 10-8 Torr
Substrate Heating & Rotation: Up to 800°C and 0 to 60 rpm
Sputtering Gun Sources: Three numbers of 2” diameter magnetron sputtering sources with individual pneumatic shutters, substrate to target distance adjustable.
Deposition Thickness uniformity: Better than +/-5% over 2”
Vacuum Gauge & Controller: Cold cathode ionization gauge and gauge Controller.
Gas Supply Unit: Three mass flow controllers (MKS) for controlling three gas flow lines (Ar, N2 and O2).
DC Power Supply: 2 KW (800 V, 2.4 A)
RF Power Supply: Min. 600 W rf generator (13.56 MHz) with matching unit.
QCM deposition thickness monitor unit
Auto pressure control unit: Baratron gauge, throttle valve and throttle valve controller.
Base Pressure: 2 × 10-8 Torr
Substrate Heating & Rotation: Up to 800°C and 0 to 60 rpm
Sputtering Gun Sources: Three numbers of 2” diameter magnetron sputtering sources with individual pneumatic shutters, substrate to target distance adjustable.
Deposition Thickness uniformity: Better than +/-5% over 2”
Vacuum Gauge & Controller: Cold cathode ionization gauge and gauge Controller.
Gas Supply Unit: Three mass flow controllers (MKS) for controlling three gas flow lines (Ar, N2 and O2).
DC Power Supply: 2 KW (800 V, 2.4 A)
RF Power Supply: Min. 600 W rf generator (13.56 MHz) with matching unit.
QCM deposition thickness monitor unit
Auto pressure control unit: Baratron gauge, throttle valve and throttle valve controller.